PART |
Description |
Maker |
RM400HV-34S |
CAP CER 22000PF 10% 50V X8R 0805 HIGH SPEED SWITCHING USE INSULATED TYPE Fast Recovery Diode Modules, F Series (for IGBT speed switching)
|
Mitsubishi Electric Sem... Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
APT50GT60BR APT50GT60SRG APT50GT60BRG |
Thunderbolt IGBT Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 52; 110 A, 600 V, N-CHANNEL IGBT, TO-247AD
|
Microsemi Corporation http:// Microsemi, Corp.
|
IRG4BC40S |
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V Vce(on)typ.=1.32V @Vge=15V Ic=31A) INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.32V, @Vge=15V, Ic=31A) 600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package
|
IRF[International Rectifier]
|
BUP400D Q67040-A4423-A2 BUP400-D |
IGBT Duopack (IGBT with Antiparallel ... IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) From old datasheet system High Speed CMOS Logic 7-Stage Binary Ripple Counter 14-TSSOP -55 to 125 由于IGBT的反平行二极管(低正向压降高开关速度低尾电流的无闩锁包括快速滑行二极管
|
Siemens Semiconductor G... Infineon Siemens Semiconductor Group SIEMENS AG
|
RM20C1A-XXS RM20DA/CA/C1A-XXS RM20CA-XXS RM20DA-XX |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE Fast Recovery Diode Modules, F Series (for IGBT speed switching) MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
IRG4PH50UPBF IRG4PH50UPBF-15 |
Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
GB100DA60UP |
Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A
|
Vishay Siliconix
|
MG600Q1US65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
TOSHIBA
|
MG400Q1US65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
TOSHIBA
|
IXSH35N135A IXSH35N140A |
1350V high speed IGBT 1400V high speed IGBT
|
IXYS
|
IXGH15N120BD1 IXGT15N120BD1 IXGH15N120CD1 IXGT15N1 |
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode 30 A, 1200 V, N-CHANNEL IGBT, TO-247AD
|
IXYS, Corp. IXYS[IXYS Corporation]
|
IXGM25N100A IXGP12N100 |
Low VCE(sat), High speed IGBT 50 A, 1000 V, N-CHANNEL IGBT, TO-204AE IGBT 20 A, 1000 V, N-CHANNEL IGBT, TO-220AB
|
IXYS, Corp.
|